Spin-valve magnetoresistive element

Details Spin-valve magnetoresistive element Spin-valve magnetoresistive element

1999-08-18

2000-09-19

Ometz, David L.

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

G11B 539

Patent

active

061221511

ABSTRACT:
A spin-valve magnetoresistive element includes a hard bias layer formed on a pinned magnetic layer with a non-magnetic layer therebetween, and thus the magnetic field from the hard bias layer is efficiently applied into a free magnetic layer. Also, the pinned magnetic layer is not influenced by the hard bias layer because of the interposition of the non-magnetic layer. Accordingly, the pinned magnetic layer and the free magnetic layer are properly put into single magnetic domain states, and thus, Barkhausen noise is reduced and satisfactory micro-track-asymmetry can be obtained.

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patent: 5608593 (1997-03-01), Kim et al.
patent: 5739990 (1998-04-01), Ravipati et al.
patent: 5748416 (1998-05-01), Tobise et al.
patent: 5892641 (1999-04-01), Ishiwata

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