Spin valve magnetoresistive device with conductive-magnetic...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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C360S324200

Reexamination Certificate

active

07830640

ABSTRACT:
Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers.

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LeClair, P. et al., “Tunnel conductance as a probe of spin polarization decay in Cu dusted Co/AI2O3/Co tunnel junctions”, Applied Physics Letters, vol. 76, No. 25, pp. 3783-3785, Jun. 19, 2000.

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