Spin valve magnetoresistive device with conductive-magnetic...

Details Spin valve magnetoresistive device with conductive-magnetic... Spin valve magnetoresistive device with conductive-magnetic...

2002-10-10

2008-11-18

Heinz, A. J. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324200

Reexamination Certificate

active

07453672

ABSTRACT:
A magnetoresistive device with a spin valve formed from a stack of layers including at least two magnetic layers for which the relative orientation of their magnetization directions can vary under the influence of a magnetic field, and comprising means of circulating a current in the spin valve transverse to the plane of the layers. The spin valve comprises at least one discontinuous dielectric or semiconducting layer in the stack, with electrically conducting bridges passing through the thickness of the dielectric or semiconducting layer, these bridges being designed to locally concentrate the current that passes transversely through the stack. Application particularly suitable for magnetic read heads, and random access memories.

REFERENCES:
patent: 5463516 (1995-10-01), Valet et al.
patent: 6064552 (2000-05-01), Iwasaki et al.
patent: 6686068 (2004-02-01), Carey et al.
patent: 0780912 (1997-06-01), None
patent: 2001 068760 (2001-03-01), None
LeClair P., et al, “Tunnel Conductance As A Probe Of Spin Polarization Decay In Cu Dusted Co/Al2O3/Co Tunnel Junctions” Applied Physics Letters, American Institute of Physics, NY, US, vol. 76, No. 25, pp. 3783-3785, Jun. 19, 2000.

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