Spin-valve element having fixed layer containing nano-oxide...

Details Spin-valve element having fixed layer containing nano-oxide... Spin-valve element having fixed layer containing nano-oxide...

2005-01-12

2008-10-07

Chen, Tianjie (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07433161

ABSTRACT:
A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

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Search Report dated Feb. 7, 2005 for British Patent Application No. GB0427311.6.

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