Spin valve effect magnetoresistive sensor and magnetic head with

Details Spin valve effect magnetoresistive sensor and magnetic head with Spin valve effect magnetoresistive sensor and magnetic head with

1998-01-13

1999-12-07

Resan, Stevan A.

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

428692, 428900, 360113, 338 32R, G11B 539

Patent

active

059980168

ABSTRACT:
A spin valve effect MR sensor includes a spin valve effect multi-layered structure. This structure has a first thin film layer of ferromagnetic material with one and the other surfaces, a second thin film layer of ferromagnetic material with one and the other surfaces, a thin film spacer layer of nonmagnetic conductive material deposited between the one surfaces of the first and second ferromagnetic material layers, a thin film layer of anti-ferromagnetic material deposited on the other surface of the second ferromagnetic material layer, for pinning the second ferromagnetic material layer, a thin film layer of anti-diffusion material deposited on the other surface of the first ferromagnetic material layer, and a thin film current bypass layer of nonmagnetic conductive material deposited on the thin film anti-diffusion material layer.

REFERENCES:
patent: 5422571 (1995-06-01), Gurney et al.
patent: 5639547 (1997-06-01), Mitsuoka et al.
patent: 5896252 (1999-04-01), Kanai
patent: 5898549 (1999-04-01), Gill
"Design, Fabrication & Testing of Spin-Valve Read Heads for High Density Recording", Tsang et al, IEEE Transactions, vol. 30, No. 6, Nov. 1994, pp. 3801-3806.

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