Spin-tunnel transistor and magnetic reproducing head

Details Spin-tunnel transistor and magnetic reproducing head Spin-tunnel transistor and magnetic reproducing head

2003-09-24

2010-10-19

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257SE21665, C257SE27005, C257SE43004, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

07816746

ABSTRACT:
A spin-tunnel transistor having a tunnel barrier layer formed of an antiferromagnetic material which is exchange coupled with a first or second ferromagnetic metal layer of a base B formed adjoining to the antiferromagnetic material, so as to fix magnetization of the adjoining ferromagnetic layer. The base B includes a nonmagnetic metal layer which is formed between the first and second ferromagnetic metal layers and decouple magnetization coupling between the first and second ferromagnetic metal layers. The base B is formed between a collector and an emitter to form tri-terminal device. Those spin-tunnel transistor may be used as a sensor of a magnetic reproducing head used in a hard disk drive.

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