Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2006-08-01
2006-08-01
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S421000, C257S565000
Reexamination Certificate
active
07084470
ABSTRACT:
Some spin tunnel transistors with a larger current transmittance and a higher MR ratio are described.One of the spin tunnel transistor comprises a collector; an emitter; a base formed between the collector and the emitter, including a first ferromagnetic metal layer variable in its magnetization under an external magnetic field; a barrier layer formed between the first ferromagnetic metal layer and one of the collector and the emitter, the other of the collector and the emitter including a semiconductor crystal layer; and a transition metal silicide crystal layer between the semiconductor crystal layer and the base. The transition metal silicide crystal layer may be replaced with a palladium layer, a transition metal nitride layer, or a transition metal carbide layer.
REFERENCES:
patent: 5747859 (1998-05-01), Mizushima et al.
patent: 5973334 (1999-10-01), Mizushima et al.
patent: 6919608 (2005-07-01), Gregg
patent: 2003/0164509 (2003-09-01), Gregg
D.J. Monsma, et al., “Perpendicular Hot Electron Spin-Valve Effect in a New Magnetic Field Sensor: The Spin-Valve Transistor” Physical Review Letters, vol. 74, No. 26, Jun. 26, 1995, pp. 5260-5623.
D.J. Monsma, et al., “Room Temperature-Operating Spin-Valve Transistors Formed by Vacuum Bonding”, SCIENCE, vol. 281, Jul. 17, 1998, pp. 407-409.
Mizushima Koichi
Sato Rie
Kabushiki Kaisha Toshiba
Ngo Ngan V.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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