Spin tunnel magnetoresistive effect film and element,...

Details Spin tunnel magnetoresistive effect film and element,... Spin tunnel magnetoresistive effect film and element,...

2007-01-09

2007-01-09

Bashore, Alain L. (Department: 1762)

Coating processes

Magnetic base or coating

C427S128000, C427S129000, C427S130000, C427S131000, C428S692100

Reexamination Certificate

active

10923990

ABSTRACT:
In a spin tunnel magnetoresistive effect film in which a magnetic thin film to which an exchange bias is applied by exchange coupling via an anti-ferromagnetic thin film and a magnetic thin film that detects a magnetic field are laminated, a magnetic thin film or an anti-ferromagnetic thin film (PtMn, PdMn, NiMn) is laminated onto an underlayer (Ta, Zr, Hf), the surface roughness thereof being in the range from 0.1 to 5 Angstroms. A means used to control the surface roughness introduces into the film growing chamber oxygen, nitrogen, hydrogen, or a gas mixture thereof into a vacuum of 10−6Torr to 10−9Torr, reduces the substrate temperature to 0° C. or lower during film growth, or oxidizes an underlayer. The lower electrode layer material used is a film laminate of a high-permeability amorphous magnetic material and a non-magnetic metallic layer.

REFERENCES:
patent: 5629922 (1997-05-01), Moodera et al.
patent: 6335081 (2002-01-01), Araki et al.
patent: 2002/0097534 (2002-07-01), Sun et al.
patent: 2000-011333 (2000-01-01), None
patent: 2000-101164 (2000-04-01), None
patent: 2001-36165 (2001-02-01), None
patent: 2001-203408 (2001-07-01), None

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