Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2008-09-18
2011-11-08
Such, Matthew W (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE29167, C438S003000, C977S933000
Reexamination Certificate
active
08053851
ABSTRACT:
A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor substrate having a channel layer formed thereinside; ferromagnetic source and drain epitaxially grown on the semiconductor substrate and magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropy—the source and drain being disposed spaced apart from each other in a channel direction and magnetized in the same direction—; and a gate disposed between the source and the drain to be insulated with the semiconductor substrate and formed on the semiconductor substrate to control the spin of electrons that are passed through the channel layer.
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patent: 7608901 (2009-10-01), Koo et al.
Datta, Electronic analog of the electro-optic modulator, Appl. Phys. Lett. 56 (7), Feb. 12, 1990, p. 665, 1990 American Institute of Physics.
Chang Joon Yeon
Han Suk Hee
Kim Hyung Jun
Kim Kyung Ho
Koo Hyun Cheol
Bradley Arent Boult Cummings LLP
Harrison Monica D
Korea Institute of Science and Technology
Such Matthew W
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