Spin transistor and method of manufacturing same

Details Spin transistor and method of manufacturing same Spin transistor and method of manufacturing same

2011-07-05

2011-07-05

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257SE29001, C365S171000, C365S173000

Reexamination Certificate

active

07973375

ABSTRACT:
The spin transistor in accordance with the present invention comprises a magnetoresistive element having a fixed layer, a free layer, and a semiconductor layer provided between the fixed layer and free layer; a source electrode layer electrically connected to one end face in a laminating direction of the magnetoresistive element; a drain electrode layer electrically connected to the other end face in the laminating direction of the magnetoresistive element; and a gate electrode layer laterally adjacent to the semiconductor layer through a gate insulating layer provided on a side face of the semiconductor layer.

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patent: A-2004-111904 (2004-04-01), None
patent: WO 2004/079827 (2004-09-01), None
patent: WO 2004/086625 (2004-10-01), None

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