Spin transistor and manufacturing method thereof

Details Spin transistor and manufacturing method thereof Spin transistor and manufacturing method thereof

2006-04-24

2008-12-30

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S240000, C257SE21665

Reexamination Certificate

active

07470551

ABSTRACT:
A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.

REFERENCES:
patent: 6226197 (2001-05-01), Nishimura
patent: 2001/0035545 (2001-11-01), Schuster-Woldan et al.
patent: 2006/0220084 (2006-10-01), Umehara et al.
Sato et al., Spin-valve transistor with an Fe/Au/Fe(001) base, Aug. 20, 2001, Applied Physics Letters, p. 1157-1159.
Erve et al., Transfer ratio of the spin-valve transistor; May 20, 2002, Applied Physics Letters, p. 3787-3789.
Dijken et al., Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers, Aug. 4, 2003, Applied Physics Letters, p. 514-953.
Dijken et al., The influence of nonmagnetic seed layers on the magnetotransport properties of magnetic tunnel transistors with a silicon collector, 2005, Journal of Applied Physics 97, p.043712-1˜8.

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