Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2008-06-05
2010-10-26
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S295000, C257S422000, C257S425000, C257SE21665, C257SE27005, C257SE43002, C257SE43004, C257SE43005, C438S003000, C438S257000, C365S158000, C365S171000, C365S173000
Reexamination Certificate
active
07821088
ABSTRACT:
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.
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Huai Yiming
Nguyen Paul P.
Convergent Law Group LLP
Grandis Inc.
Nguyen Dao H
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