Spin-polarized electron emitter having semiconductor opto-electr

Details Spin-polarized electron emitter having semiconductor opto-electr Spin-polarized electron emitter having semiconductor opto-electr

1993-09-22

1998-05-05

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 11, 250423P, 313310, 313113, H01L 310304

Patent

active

057478627

ABSTRACT:
An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

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Physical Review Letters, vol. 66, No. 18, pp. 2376-2379, May 6, 1991, T. Maruyama et al., "Observation of Strain-Enhanced Electron-Spin Polarization in Photoemission From InGaAs".
Nuclear Instruments & Methods in Physics Research, vol. A286, No. 1/2, pp. 1-8, Jan. 1, 1990, W. Hartmann, et al., "A Source of Polarized Electrons Based on Photoemission of GaAsP".
Physics Letters, No. 158, pp. 345-349, 1991, T. Nakanishi, et al., "Large Enhancement of Spin Polarization Observed by Photoelectrons from a Strained GaAs Layer".
Applied Physics Letter, vol. 54, No. 7, pp. 632-634, Feb. 13, 1989, F. Ciccacci, et al., "Spin-Polarized Photoemission Form AlGaAs Heterojunction: A Convenient Highly Polarized Electron Source".

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