Spin-polarization of carriers in semiconductor materials for...

Details Spin-polarization of carriers in semiconductor materials for... Spin-polarization of carriers in semiconductor materials for...

2005-10-18

2005-10-18

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S252000, C257S427000

Reexamination Certificate

active

06956269

ABSTRACT:
Spin-based microelectronic devices can be realized by utilizing spin-polarized ferromagnetic materials positioned near, or embedded in, a semiconductor channel of a microelectronic device. Applying an electric field across the channel can cause carriers flowing through the channel to deviate toward one of the ferromagnetic materials, such that the spin of the carriers tends to align with the spin polarization of the respective material. Such a process allows for the controlled spin-polarization of carriers in a semiconductor channel, and hence the development of spin-based microelectronics, without having to inject spin-polarized carriers from a ferromagnet into a semiconductor channel. Such a process avoids the Schottky barrier problem plaguing existing approaches to spin-based microelectronics, while allowing the devices to be based on silicon substrates that are well-known and used in the industry.

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patent: 5652445 (1997-07-01), Johnson
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patent: 6297987 (2001-10-01), Johnson et al.
patent: 6313539 (2001-11-01), Yokoyama et al.

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