Spin on memory cell active layer doped with metal ions

Details Spin on memory cell active layer doped with metal ions Spin on memory cell active layer doped with metal ions

2008-03-18

2008-03-18

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S622000, C438S681000, C438S687000, C438S762000, C438S780000

Reexamination Certificate

active

11099847

ABSTRACT:
A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active layer and passive layer. The active layer is formed using spin on techniques and contains an organic semiconductor doped with a metal salt.

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