Spin-on-glass planarization process with ion implantation

Details Spin-on-glass planarization process with ion implantation Spin-on-glass planarization process with ion implantation

1995-04-27

1996-03-05

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437238, 437240, H01L 21469

Patent

active

054967767

ABSTRACT:
A spin-on-glass sandwich layer planarization process where the spin-on-glass layer within the sandwich has been ion implanted through its entire thickness. The spin-on-glass sandwich layer is formed by successive deposition of a silicon oxide layer, followed by a spin-on-glass layer. The spin-on-glass layer is then thermally cured and ion implanted throughout its entire thickness. Various combinations of implanting ions, ion doses and implantation energies are used to implant the spin-on-glass layer. Finally, a second silicon oxide layer is formed upon the surface of the spin-on-glass layer to complete the spin-on-glass sandwich layer.

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"Modification Effects in Ion-Implated SiO.sub.2 Spin-On-Glass" by Moriya et al, 140, J. Electrochem Soc. 1442 (1993).

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