Spin-on-glass nonetchback planarization process using oxygen pla

Details Spin-on-glass nonetchback planarization process using oxygen pla Spin-on-glass nonetchback planarization process using oxygen pla

1995-06-28

1996-09-17

Fourson, George

Fishing, trapping, and vermin destroying

437231, 437238, 437977, H01L 2128

Patent

active

055568068

ABSTRACT:
An improved method is described for planarizing dielectric layers which are formed between conductor layers in integrated circuits A three layer spin-on-glass sandwich is formed comprising a first silicon oxide layer, a spin-on-glass layer and a second silicon oxide layer. The improvement comprises performing an O.sub.2 plasma treatment on the first silicon oxide layer prior to forming the overlying spin-on-glass layer. The method prevents delamination (separation) between the first silicon oxide layer and the middle spin-on-glass layer.

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