Spin-on glass for use in semiconductor processing

Compositions: coating or plastic – Coating or plastic compositions – Silicon containing other than solely as silicon dioxide or...

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10628713, 10628712, C09K 300

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active

047986298

ABSTRACT:
A spin-on glass consisting of, by volume: 1.0 parts tetraethoxysilane (TEOS, also known as tetraethylorthosilicate), methyltriethoxysilane, and dimethyldiethoxysilane in a 2/1/1 ratio; 1.1 parts ethanol (EtOH, also known as ethyl alcohol); 0.0002 parts hydrochloric acid (HCl); and 0.26 parts water (H.sub.2 O).

REFERENCES:
patent: 3789023 (1974-01-01), Ritchie
patent: 3832202 (1974-08-01), Ritchie
patent: 3915766 (1975-10-01), Pollack et al.
patent: 4170690 (1979-10-01), Armbruster et al.
patent: 4173490 (1979-11-01), Rotenberg et al.
patent: 4435219 (1984-03-01), Greigger et al.
patent: 4439239 (1984-03-01), Greigger et al.
patent: 4485130 (1984-11-01), Lampin et al.
patent: 4518727 (1985-05-01), Traver
patent: 4605446 (1986-08-01), Isozaki
Journal of Vacuum Science & Technology B, vol. 3, No. 5, Sep./Oct. 1985, pp. 1352-1356.

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