Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-05-17
2011-05-17
Nguyen, Thinh T (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S048000, C438S071000, C257S295000, C257S421000, C257SE21665
Reexamination Certificate
active
07943399
ABSTRACT:
A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
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Allenspach Rolf
Papworth Parkin Stuart Stephen
Slonczewski John Casimir
Sun Jonathan Zanhong
Terris Bruce David
International Business Machines - Corporation
McGinn IP Law Group PLLC
Nguyen Thinh T
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