Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-04-10
2007-04-10
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S778000, C438S782000
Reexamination Certificate
active
09997019
ABSTRACT:
A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.
REFERENCES:
patent: 4518678 (1985-05-01), Allen
patent: 5238878 (1993-08-01), Shinohara
patent: 5405813 (1995-04-01), Rodrigues
patent: 5663090 (1997-09-01), Dennison et al.
patent: 5677001 (1997-10-01), Wang et al.
patent: 5818111 (1998-10-01), Jeng et al.
patent: 5821621 (1998-10-01), Jeng
patent: 5824603 (1998-10-01), Cho
patent: 5855962 (1999-01-01), Cote et al.
patent: 5900290 (1999-05-01), Yang et al.
patent: 5923074 (1999-07-01), Jeng
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 5972803 (1999-10-01), Shu et al.
patent: 5980657 (1999-11-01), Farrar et al.
patent: 5994231 (1999-11-01), Sonego et al.
patent: 6046083 (2000-04-01), Lin et al.
patent: 6117486 (2000-09-01), Yoshihara
patent: 6146968 (2000-11-01), Lu et al.
patent: 6228711 (2001-05-01), Hsieh
patent: 6235605 (2001-05-01), Ping
patent: 6251487 (2001-06-01), Yonaha
patent: 6268246 (2001-07-01), Ukita et al.
patent: 6278153 (2001-08-01), Kikuchi et al.
patent: 6303430 (2001-10-01), Jenq
patent: 6326282 (2001-12-01), Park et al.
patent: 6358793 (2002-03-01), Yates et al.
patent: 6417066 (2002-07-01), Lou
patent: 6461932 (2002-10-01), Wang
Wolf, Stanley and Tauber, Richard, Silicon Processing for the VLSI Era, vol. 1: Process Technology, pp. 429-434, Lattice Press, Sunset Beach, California 1986.
SERWAY, Physics for Scientists and Engineers with Modern Physics, Saunders College Publishing, pp. 26-32.
Van Zant, Peter, “Microchip Fabrication, A Practical Guide to Semiconductor Processing,” pp. 176-178 and 185-187 (McGraw-Hill, 1990).
Davlin John
Whitman John
Kebede Brook
TraskBritt
LandOfFree
Spin coating for maximum fill characteristic yielding a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Spin coating for maximum fill characteristic yielding a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin coating for maximum fill characteristic yielding a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3731660