Spin coating for maximum fill characteristic yielding a...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

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C438S778000, C438S782000

Reexamination Certificate

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09997019

ABSTRACT:
A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.

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