Spin coating for maximum fill characteristic yielding a...

Details Spin coating for maximum fill characteristic yielding a... Spin coating for maximum fill characteristic yielding a...

2006-09-05

2006-09-05

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S437000, C438S763000, C438S778000, C438S782000

Reexamination Certificate

active

07101771

ABSTRACT:
A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.

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