Spin casting of silicon wafers

Details Spin casting of silicon wafers Spin casting of silicon wafers

1991-01-08

1992-11-10

Kashnikow, Andres

Dispensing

With heating or cooling means

Heating only

222368, 425425, 425447, B67D 562

Patent

active

051617170

ABSTRACT:
An apparatus for casting a single silicon wafer. A quartz drum having a slotted opening pours measured amounts of granulated or powdered silicon into a crucible. Heaters then melt the solid silicon to provide a molten silicon in the crucible. Utilizing controlled gas pressure, the molten silicon is poured from the crucible onto a wafer chuck in order to cast a single silicon wafer.

REFERENCES:
patent: 2852351 (1958-09-01), Pfann
patent: 2926075 (1960-02-01), Pfann
patent: 3091368 (1963-05-01), Harley et al.
patent: 3393834 (1968-07-01), Snyder
patent: 3865564 (1975-02-01), Jaeger et al.
patent: 4378897 (1983-04-01), Kattelmann
patent: 4519764 (1985-05-01), Maeda et al.
VLSI Technology, S. M. Sze, "Crystal Growth and Wafer Preparation", C. W. Pearce, McGraw Hill, 1988.
J. Appl. Phys. 63(8), pp. 2660-2668, "Role of Impurities in zone Melting Recrystallization of 10 .mu.m Thick Polycrystalline Silicon Films", Mertens et al., 15 Apr. 1988.
Appl. Phys. 1 Oct. 1981, pp. 561-563, "Improved Techniques for Growth of Large-Area Single-Crystal Si Sheets Over SiO.sub.2 Using Lateral Epitaxy by Seeded Solidification", Tsaur et al.

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