Spectral monitoring device for both plasma etching and sputterin

Details Spectral monitoring device for both plasma etching and sputterin Spectral monitoring device for both plasma etching and sputterin

1981-03-23

1983-09-20

Wise, Edward J.

Boots, shoes, and leggings

364552, 364468, 156627, 356381, H01L 21306, H03K 518, G06F 1546

Patent

active

044059892

ABSTRACT:
In order to monitor the status, such as a decreasing or an increasing thickness, of a layer in response to a single light beam produced from a chamber in which the layer is processed, as by etching or sputtering, by the use of plasma, a monitoring device splits, according to spectral regions, the beam into two components of intensities variable with time and calculates a difference between the intensities, a power of the difference, and a ratio between the intensities. The status is monitored by selecting the difference, power, and ratio. The spectral regions may be 3962 and 3050 A for an aluminum layer being etched and 3248 and 8115 A for a copper layer sputter-formed in argon. Preferably, the difference and the power are monitored a predetermined interval of time after start of etch. The ratio is used in combination with a plasma sputtering device.

REFERENCES:
patent: 3924113 (1975-12-01), Gill et al.
patent: 3972617 (1976-08-01), Shibata et al.
patent: 4126510 (1978-11-01), Moscony et al.
patent: 4208240 (1980-06-01), Latos
patent: 4297676 (1981-10-01), Moriya et al.
patent: 4308586 (1981-12-01), Costes
patent: 4332833 (1982-06-01), Aspnes et al.
Digital Methods for Thin Film Analysis Using a Computer-Controlled Auger Spectometer; American Laborator, vol. 9, No. 3, Mar. 1977, pp. 27-34.
Microcomputerized Facility for On-Line Spectroscopic Plasma Diagnostics; Partlow et al., Optical Engineering, vol. 20, No. 2, Mar./Apr. 1981, pp. 267-270.
In-Situ, Real-Time Thin-Film Refractive Index and Thickness Monitor, Hewig & Jain, IBM Technical Disclosure Bulletin, vol. 25, No. 1, Jun. 1982, pp. 436-438.

Affiliated with

Also associated with

Rating

Spectral monitoring device for both plasma etching and sputterin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Spectral monitoring device for both plasma etching and sputterin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spectral monitoring device for both plasma etching and sputterin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-591077