Semiconductor device manufacturing: process – Repair or restoration
Reexamination Certificate
2005-04-26
2005-04-26
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
Repair or restoration
C438S017000
Reexamination Certificate
active
06884634
ABSTRACT:
A method of specifying a Cu-contamination-causative step or steps in a Si wafer reclamation process including plural steps in combination, comprising: using p-type Si wafers, or p-type Si wafers and n-type Si wafers as monitor wafers, and performing a measuring operation for measuring the electrical resistance of the monitor wafers at least once before and after a single step or a series of successive steps during the Si wafer reclamation process. The present invention is capable of nondestructively, simply, and accurately detecting Cu that can contaminate Si wafers during a Si wafer reclamation process and is capable of specifying a Cu-contamination-causative process.
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Suzuki Tetsuo
Takada Satoru
Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd).
Kobe Precision Inc.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pert Evan
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