Spatial light modulation in compound semiconductor materials

Details Spatial light modulation in compound semiconductor materials Spatial light modulation in compound semiconductor materials

1988-03-23

1990-02-06

Arnold, Bruce Y.

350 385, 350389, 350390, G03H 112, G02F 135, G02B 2728

Patent

active

048984361

ABSTRACT:
Spatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).

REFERENCES:
patent: 4761059 (1988-08-01), Yeh et al.
patent: 4767195 (1988-08-01), Pepper

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