Spatial absorptive and phase shift filter layer to reduce modal

Coherent light generators – Particular active media – Semiconductor

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372 46, 372 96, H01S 500

Patent

active

061446823

ABSTRACT:
A first, thicker, annular gallium arsenide semiconductor layer surrounds a second, thinner, circular gallium arsenide semiconductor layer in a vertical cavity surface emitting laser. The thinner circular gallium arsenide layer defines the output window for the laser cavity which matches the TEM.sub.00 fundamental mode of the light beam emitted by the active region of the VCSEL. The thicker annular gallium arsenide layer outside the output window of the thinner circular gallium arsenide layer provides modal reflectivity discrimination against high order transverse modes of the light beam emitted by the active region of the VCSEL.

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Morgan et al., "Transverse Mode Control of Vertical-Cavity Top-Surface-Emitting Lasers", IEEE Photonics Technology Letters, vol. 4, No. 4, Apr. 1993, pp. 374-377.

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