Spacer electrode small pin phase change RAM and...

Details Spacer electrode small pin phase change RAM and... Spacer electrode small pin phase change RAM and...

2011-01-11

2011-01-11

Mandala, Victor A (Department: 2826)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

Direct application of electrical current

C438S102000, C438S142000, C438S482000, C257SE21068

Reexamination Certificate

active

07867815

ABSTRACT:
A memory device comprising a first pan-shaped electrode having a side wall with a top side, a second pan-shaped electrode having a side wall with a top side and an insulating wall between the first side wall and the second side wall. The insulating wall has a thickness between the first and second side walls near the respective top sides. A bridge of memory material crosses the insulating wall, and defines an inter-electrode path between the first and second electrodes across the insulating wall. An array of such memory cells is provided. The bridges of memory material have sub-lithographic dimensions.

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