Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2005-03-08
2005-03-08
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S030000, C257S031000, C257S246000
Reexamination Certificate
active
06864503
ABSTRACT:
The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.
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Beffel, Jr. Ernest J.
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Nelms David
Nguyen Thinh T
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