Spacer-based antifuse structure for low capacitance and high rel

Details Spacer-based antifuse structure for low capacitance and high rel Spacer-based antifuse structure for low capacitance and high rel

1998-02-10

2000-02-15

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257773, H01L 2900

Patent

active

060256370

ABSTRACT:
The present antifuse includes a base having a first electrode thereon which defines a top surface and a side surface. Antifuse material is disposed on the first electrode on at least a portion of the top surface and at least a portion of the side surface, with a second electrode on the antifuse material. Due to this configuration, defect problems in etching oxide as part of the antifuse structure are avoided, and meanwhile capacitance of the device is very low.

REFERENCES:
patent: 4203123 (1980-05-01), Shanks
patent: 4513303 (1985-04-01), Abbas et al.
patent: 4670970 (1987-06-01), Bajor
patent: 4748490 (1988-05-01), Hollingsworth
patent: 5100827 (1992-03-01), Lytle
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5208177 (1993-05-01), Lee
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5493144 (1996-02-01), Bryant et al.
patent: 5498895 (1996-03-01), Chen
patent: 5541441 (1996-07-01), Yeuochung et al.
patent: 5550400 (1996-08-01), Takagi et al.
patent: 5625219 (1997-04-01), Takagi

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