1982-09-17
1987-01-20
Edlow, Martin H.
357 22, H01L 2956
Patent
active
046383425
ABSTRACT:
An electrical device which employs two-dimensional space charge modulation in a semiconductor structure. The device has an approximately Debye length wide contact and a rectifying contact positioned adjacent to each other within a Debye length on a semiconductor body and a contact remotely positioned. A bias on the rectifying contact will effect conduction between the other contacts.
REFERENCES:
patent: 3549961 (1970-12-01), Gauit
patent: 3684902 (1972-08-01), Giulliano et al.
patent: 4066483 (1978-01-01), D'Altroy et al.
patent: 4132996 (1979-01-01), Baliga
patent: 4236166 (1980-11-01), Chou et al.
patent: 4466008 (1984-08-01), Beneking
Fabrication and Numerical Simulation of the Permeable Base Transistor, Bozler et al., IEEE Trans on Elec Devices, vol. 27, No. 6, Jun. 1980, pp. 1128-1141.
High-Frequency High-Power Static Induction Transistor, Nishizawa et al., IEEE Trans. on Elec. Devices, vol. 25, No. 3, Mar. 1978, pp. 314-322.
Gate for MOS Devices: Rare Earth Silicides Howard, IBM Tech Discl Bull., vol. 21, No. 7, Dec. 1978, pp. 2811-2813.
Size Dependence of "Effective" Barrier Heights of Mixed-Phase Contacts Freeouf et al, Amer. Vacuum Soc. 21(2) Jul./Aug. 1982, pp. 570-573.
"Physics of Semiconductor Devices", Second Edition, by S. M. Sze, published by John Wiley & Sons, pp. 77 and 78.
Freeouf John L.
Jackson Thomas N.
Laux Steven E.
Woodall Jerry M.
Edlow Martin H.
Henn Terri M.
International Business Machines - Corporation
Riddles Alvin J.
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