Sp3 bond boron nitride emitting light in ultraviolet region,...

Chemistry: electrical and wave energy – Processes and products – Processes of treating materials by wave energy

Reexamination Certificate

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C204S157450, C423S290000

Reexamination Certificate

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07419572

ABSTRACT:
The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.

REFERENCES:
patent: 4435445 (1984-03-01), Allred et al.
patent: 5080753 (1992-01-01), Doll et al.
patent: 5286533 (1994-02-01), Komatsu et al.
patent: 3-79770 (1991-04-01), None
patent: 5-4808 (1993-01-01), None
patent: 10-7409 (1998-01-01), None
Shojiro Komatsu et al, New Phase of sp -Bonded BN: The 5H Polytype, The Journal of Physical Chemistry B, vol. 103, No. 17, Apr. 29, 1999, 3289-3291.

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