Source reagent compositions for CVD formation of high...

Details Source reagent compositions for CVD formation of high... Source reagent compositions for CVD formation of high...

2006-08-22

2006-08-22

Brunsman, David (Department: 1755)

Compositions: coating or plastic

Coating or plastic compositions

Heavy metal compound containing

C556S040000

Reexamination Certificate

active

07094284

ABSTRACT:
Chemical vapor deposition (CVD) precursor compositions for forming metal oxide high dielectric constant (κ) thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(β-diketonate)2(OR)2, wherein M is Hf, Zr or Ti, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.

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