Source reagent compositions for CVD formation of gate...

Details Source reagent compositions for CVD formation of gate... Source reagent compositions for CVD formation of gate...

2005-03-22

2005-03-22

Nazario-Gonzalez, Porfirio (Department: 1621)

Coating processes

Electrical product produced

Metallic compound coating

C427S255310, C427S255320, C438S785000, C534S015000, C546S002000, C556S001000, C556S042000, C556S051000, C556S176000

Reexamination Certificate

active

06869638

ABSTRACT:
A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, orwherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1and R2is same or different and is independently selected from H, aryl, perfluoroaryl, C1-C8alkyl, C1-C8perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR1R2)4-x-yorwherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1and R2is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8alkyl, and C1-C8perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

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