Source drain doping technique

Details Source drain doping technique Source drain doping technique

1987-09-16

1988-11-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 43, 437 44, 437147, 437154, 437157, 357 233, 357 239, 357 91, 148DIG53, 148DIG82, 148DIG106, H01L 21265

Patent

active

047849657

ABSTRACT:
A method of forming metal oxide semiconductor field-effect transistors (MOSFET) is described wherein the source and drain regions are disposed by ion implantation in a manner substantially perpendicular to the substrate surface in two steps, such that the concentration of impurities increases with lateral distance away from the gate electrode member to suppress the hot e injection, to prevent channeling effect, to increase punch through voltage and to increase gate-aided breakdown voltage.

REFERENCES:
patent: 4198250 (1980-04-01), Jecmen
patent: 4204894 (1980-05-01), Komeda et al.
patent: 4258465 (1981-03-01), Yasui et al.
patent: 4330931 (1982-05-01), Liu
patent: 4366613 (1983-01-01), Ogura et al.
Ghandhi, VLSI Fabrication Principles, John Wiley and Sons, 1983.

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