Source drain doping technique

Details Source drain doping technique Source drain doping technique

1987-09-16

1988-07-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 30, 437 34, 437 44, 148DIG82, 148DIG106, 357 233, 357 239, H01L 21265

Patent

active

047570261

ABSTRACT:
A method of forming complementary metal oxide semiconductor field-effect transistors (CMOSFET) is described wherein the source and drain regions are disposed by ion implantation in a manner substantially perpendicular to the substrate surface in two steps, such that the concentration of impurities increases with lateral distance away from the gate electrode member to suppress the hot e injection, to prevent channeling effects, to increase punch through voltage and to increase gate-aided breakdown voltage.

REFERENCES:
patent: 4366613 (1983-01-01), Ogura et al.
patent: 4536944 (1985-08-01), Bracco et al.
patent: 4642878 (1987-02-01), Maeda
Ghandhi, VLS1 Fabrication Principles, John Wiley and Sons, 1983, p. 230.

Affiliated with

Also associated with

Rating

Source drain doping technique does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Source drain doping technique, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Source drain doping technique will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-664340