Source and drain side early boosting using local self...

Details Source and drain side early boosting using local self... Source and drain side early boosting using local self...

2008-04-01

2009-08-18

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Disturbance control

C365S185180, C365S185280

Reexamination Certificate

active

07577026

ABSTRACT:
Program disturb is reduced during programming of non-volatile storage by providing a boosting scheme in which isolation voltage are applied to two word lines to create a source side channel region on a source side of one isolation word line, an intermediate channel region between the isolation word lines and a drain side channel region on a drain side of the other isolation word line. Further, during a programming operation, the source and drain side channel regions are boosted early while the intermediate channel region is boosted later, when a program pulse is applied. This approach prevents charge leakage from the intermediate channel region to the source side, avoiding disturb of already programmed storage elements, while also allowing electrons to flow from the intermediate channel region to the drain side channel region, which makes the boosting of the intermediate channel region easier.

REFERENCES:
patent: 5075890 (1991-12-01), Itoh
patent: 5386422 (1995-01-01), Endoh
patent: 5522580 (1996-06-01), Varner, Jr.
patent: 5570315 (1996-10-01), Tanaka
patent: 5677873 (1997-10-01), Choi
patent: 5715194 (1998-02-01), Hu
patent: 5774397 (1998-06-01), Endoh
patent: 5991202 (1999-11-01), Derhocobian
patent: 6046935 (2000-04-01), Takeuchi
patent: 6049494 (2000-04-01), Sakui et al.
patent: 6222762 (2001-04-01), Guterman
patent: 6295227 (2001-09-01), Sakui
patent: 6456528 (2002-09-01), Chen
patent: 6522580 (2003-02-01), Chen
patent: 6522583 (2003-02-01), Kanda
patent: 6859395 (2005-02-01), Matsunaga
patent: 6859397 (2005-02-01), Lutze
patent: 6975537 (2005-12-01), Lutze
patent: 6987694 (2006-01-01), Lee
patent: 7009881 (2006-03-01), Noguchi
patent: 7020026 (2006-03-01), Guterman
patent: 7023736 (2006-04-01), Cernea
patent: 7023737 (2006-04-01), Wan
patent: 7046568 (2006-05-01), Cernea
patent: 7054195 (2006-05-01), Matsunaga
patent: 7088621 (2006-08-01), Guterman
patent: 7123518 (2006-10-01), Cheng
patent: 7161833 (2007-01-01), Hemink
patent: 7170788 (2007-01-01), Wan
patent: 7170793 (2007-01-01), Guterman
patent: 7184308 (2007-02-01), Kwon
patent: 7196928 (2007-03-01), Chen
patent: 7196931 (2007-03-01), Cernea
patent: 7301812 (2007-11-01), Guterman
patent: 7304894 (2007-12-01), Joo
patent: 7440323 (2008-10-01), Lutze et al.
patent: 2004/0057287 (2004-03-01), Cernea
patent: 2004/0109357 (2004-06-01), Cernea
patent: 2004/0255090 (2004-12-01), Guterman
patent: 2005/0024939 (2005-02-01), Chen
patent: 2006/0126390 (2006-06-01), Gorobets
patent: 2006/0140007 (2006-06-01), Cernea
patent: 2006/0140012 (2006-06-01), Wan
patent: 2006/0158947 (2006-07-01), Chan
patent: 2006/0164904 (2006-07-01), Saleh
patent: 2006/0198195 (2006-09-01), Hemink
patent: 2006/0203557 (2006-09-01), Fukuda
patent: 2006/0221692 (2006-10-01), Chen
patent: 2006/0250850 (2006-11-01), Lee
patent: 2006/0279990 (2006-12-01), Wan
patent: 2007/0236992 (2007-10-01), Oowada
Office Action dated Jul. 2, 2008, U.S. Appl. No. 11/745,092, filed May 7, 2007.
Office Action dated Jul. 2, 2008, U.S. Appl. No. 11/745,082, filed May 7, 2007.
PCT International Search Report dated Jul. 8, 2008, PCT Appl. No. PCT/US2008/062432, filed May 2, 2008.
Written Opinion of the International Searching Authority dated Jul. 8, 2008, PCT Appl. No. PCT/US2008/062432, filed May 2, 2008.
Notice of Allowance dated Aug. 29, 2008, U.S. Appl. No. 11/745,082, filed May 7, 2007.
Notice of Allowance dated Sep. 8, 2008, U.S. Appl. No. 11/745,092, filed May 7, 2007.

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