SOS Substrate for semiconductor device

Details SOS Substrate for semiconductor device SOS Substrate for semiconductor device

1982-09-24

1984-04-10

Rutledge, L. Dewayne

Stock material or miscellaneous articles

Composite

Of silicon containing

428702, 148 33, 156DIG61, H01L 2120

Patent

active

044421788

ABSTRACT:
The invention provides an SOS substrate for a semiconductor device wherein an epitaxial silicon layer which has an index of plane (100) is formed on a single crystal sapphire plate which has an index of plane (1012). An orientation flat is formed at an incline angle of 2.1 to 2.2.degree. with respect to a [011] or [011] direction on the surface of the epitaxial silicon layer which has the index of plane (100). The direction of the orientation flat on the surface of the sapphire plate is aligned with the direction of a cleavage plane of the sapphire plate.

REFERENCES:
patent: 4131496 (1978-12-01), Weitzel et al.
Chang, Silicon-on-Sapphire Epitaxy by Vacuum Sublimation, pp. 500-511, Journal of Vacuum Science and Technology, vol. 8, No. 3, 12/22/70.
Nolder et al, Heteroepitaxial Silicon-Aluminum Oxide Interface, Part II Orientation Relations of Single-Crystal Silicon on Alpha Aluminum Oxide, Transactions of Metallurgical Society of AIME, vol. 233, Mar. 1965, pp. 549-556.
J. E. A. Maurits, "Problems and Solutions in the Preparation of SOS Wafers", Solid State Technology (Apr. 1977) pp. 81-86.

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