SOS p--n Junction device with a thick oxide wiring insulation la

Details SOS p--n Junction device with a thick oxide wiring insulation la SOS p--n Junction device with a thick oxide wiring insulation la

1981-03-05

1984-05-08

Edlow, Martin H.

357 41, 357 42, 357 49, 357 51, 357 4, H01L 2978, H01L 2702, H01L 2712, H01L 4500

Patent

active

044478232

ABSTRACT:
A semiconductor device having silicon-on-sapphire structure in which a pn junction element is formed in a silicon substrate disposed on a sapphire plate. An oxide layer is formed in the surface area of the p-type region which serves to form the pn junction elements.

REFERENCES:
patent: 4087902 (1978-05-01), Feltner
patent: 4169746 (1979-10-01), Ipri et al.
patent: 4253162 (1981-02-01), Hollingsworth
patent: 4320312 (1982-03-01), Walker et al.
patent: 4395726 (1983-07-01), Maeguchi
ISSCC 74, "High Density Static ESFI MOS Memory Cells,", by Karl Goser, Michael Pomper and Jeno Tihanyi.
Abbas et al. IBM Tech. Disc. Bull., vol. 16, No. 3, Aug. 1973, "Silicon-On Sapphire . . . ", pp. 1027-1029.

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