Metal treatment – Stock – Ferrous
Patent
1974-05-02
1976-03-09
Larkins, William D.
Metal treatment
Stock
Ferrous
148 15, 357 4, 357 35, 357 52, 357 56, 357 71, 357 91, H01L 2712, H01L 2972, H01L 2186, H01L 21265
Patent
active
039435555
ABSTRACT:
A planar bipolar transistor is made by the successive ion implantations of selected atoms into selected regions of a layer of doped single-crystal silicon on an insulating substrate, such as sapphire or spinel. The silicon layer is epitaxially grown, has a thickness of between 0.5 and 5 .mu.m, and is formed in two strata of different resistivities. A collector contact well is ion implanted into the upper stratum and annealed to diffuse it into the lower stratum of lower resistivity. The transistor is isolated, as a mesa, on the substrate; and an edge-guard region is ion implanted through the periphery of the mesa, except in the region of the emitter-base junction.
REFERENCES:
patent: 3383567 (1968-05-01), King et al.
patent: 3486892 (1969-12-01), Rosvold
patent: 3567508 (1971-03-01), Cox et al.
patent: 3602781 (1971-06-01), Hart
patent: 3660732 (1972-05-01), Allison
patent: 3666548 (1972-05-01), Brack et al.
patent: 3761319 (1973-09-01), Shannon
patent: 3890632 (1975-06-01), Ham et al.
Ronen et al., "Recent Advances in Thin-Film Silicon Devices on Sapphire Substrates," Proceedings of the IEEE, Vol. 59, pp. 1506-1510, Oct. 1971.
Fogiel, Modern Microelectronics (Research and Education Assn., N.Y., 1972) pp. 429-430.
Douglas Edward Curtis
Mueller Charles William
Christoffersen H.
Larkins William D.
Magee T. H.
RCA Corporation
LandOfFree
SOS Bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with SOS Bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SOS Bipolar transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-837163