Sonic irradiation during wafer immersion

Details Sonic irradiation during wafer immersion Sonic irradiation during wafer immersion

2008-09-29

2010-06-01

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S478000, C438S795000, C257SE21170, C257SE21174, C257SE21304, C257SE21329, C257SE21333, C257SE21475, C257S428000, C257S414000

Reexamination Certificate

active

07727863

ABSTRACT:
Sonic radiation is applied to a wafer portion of the planar surface of a rotating, tilted wafer as it is being immersed into a liquid treatment bath. The portion includes the leading outer edge region of the wafer. The area of the wafer portion is significantly less than the total surface area of the planar wafer surface. Power density is minimized. As a result, bubbles are removed from the wafer surface and cavitation in the liquid bath is avoided. In some embodiments, the liquid bath is de-gassed to inhibit bubble formation.

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