Solution-processed inorganic films for organic thin film...

Details Solution-processed inorganic films for organic thin film... Solution-processed inorganic films for organic thin film...

2007-05-22

2011-12-20

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S057000, C257S411000, C977S788000, C977S936000, C525S342000

Reexamination Certificate

active

08080822

ABSTRACT:
A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60° C. to 225° C. The sol-gel film made by the method, and an organic thin-film transistor incorporating the sol-gel film are also disclosed.

REFERENCES:
patent: 2005/0022697 (2005-02-01), Benrashid et al.
patent: 2005/0234167 (2005-10-01), Bae et al.
patent: 2010/0140623 (2010-06-01), Min et al.
patent: 1 513 165 (2005-03-01), None
patent: 2003-0023388 (2003-03-01), None
patent: WO 02/16971 (2002-02-01), None
patent: WO 03/054981 (2003-07-01), None

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