Solution for cleaning silicon semiconductors and silicon oxides

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

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252 793, 134 3, 1566621, 510375, C09K 1300, H01L 2100

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active

055608574

ABSTRACT:
A cleaning solution for achieving highly accurate cleaning of silicon semiconductors and silicon oxides. The solution which enables a great reduction in the metal contaminants and the number of fine particles adhered on the surfaces and retention of the hydrophilic property of the surfaces to prevent the surfaces from being unstable, comprising an aqueous acidic solution containing 0.005% by weight or more to less than 0.05% by weight hydrogen fluoride and 0.3% by weight or more to 20.0% by weight or less hydrogen peroxide and having a pH in the range from 1 or more to less than 5.

REFERENCES:
patent: 4171242 (1979-10-01), Liu
IEEE Transactions On Semiconductor Manufacturing, vol. 5, No. 2, May, 1992, pp. 114-120, XP 000360141 Itano et al., Particle Deposition and Removal in Wet Cleaning Processes for ULSI Manufacturing.
Extended Abstracts, vol. 87, No. 1, 1887 Princeton New Jersey, US, pp. 381-382, Lampert, Influences of the Cleaning Method On the Chemical Behavior of Hydrophilic Silicon Surfaces.
Journal of Electrochemical Society, vol. 139, No. 6, Jun., 1992, pp. 1751-1756, XP 000324426 Anttila et al., Metal Contamination Removal On Silicon Wafers Using Dilute Acidic Solutions.
IEEE Transactions On Semiconductor Manufacturing, vol. 6, No. 3, Aug., 1993, pp. 258-267, XP 000399828 Itano et al., Particle Removal From Silicon Wafer Surface In Wet Cleaning Process.
Kem, et al, "Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology", RCA Review, Jun. 1970, pp. 187-205.

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