Solution composition for removing a remaining photoresist resin

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

Reexamination Certificate

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Details

C510S176000, C510S254000, C510S255000, C510S499000, C134S002000, C134S003000, C438S692000

Reexamination Certificate

active

07056872

ABSTRACT:
Cleaning solutions for removing photoresist resins remaining on the underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask. The cleaning solution for removing photoresist comprises H2O as solvent, amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material. Photoresist coated on the top portion of underlying layers can be rapidly and effectively removed by the disclosed cleaning solution. In addition, the cleaning solution is environment-friendly because H2O is used as the solvent, and has little effect on metal layers when underlying layers are formed of metals.

REFERENCES:
patent: 3919100 (1975-11-01), Brindisi et al.
patent: 5981454 (1999-11-01), Small
patent: 6534458 (2003-03-01), Kakizawa et al.
patent: 6752878 (2004-06-01), Montano et al.
patent: 1020010067436 (2001-07-01), None

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