Solidstate light-emitting device

Details Solidstate light-emitting device Solidstate light-emitting device

1978-01-30

1979-04-10

Miller, Jr., Stanley D.

Oscillators

Relaxation oscillators

331 945H, 357 16, 357 17, H01L 3300, H01S 319

Patent

active

041491750

ABSTRACT:
A mesa region of a stripe geometry is formed by mesa-etching a surface of a GaAs crystal substrate, forming a crystal layer of higher resistivity than the abovementioned crystal substrate so as to fill the abovementioned mesa-etched recesses in a manner that the stripe shaped mesa region is buried in the higher resistivity regions making top faces of the mesa region and the higher resistivity regions flush with each other, then forming, on the abovementioned flush surface, several epitaxial growth regions of semiconductor crystal including a light emitting region, for instance, an active region for lasing, subsequently forming contact isolation region having an opening of the stripe geometry corresponding to and above said mesa region. The current flow in the active region is confined in a narrow stripe region.

REFERENCES:
patent: 3697336 (1972-10-01), Lamorte
patent: 3849790 (1974-11-01), Gottsmann et al.
patent: 3984262 (1976-10-01), Burnham et al.
Tsukada, "GaAs-Ga.sub.1-x Al.sub.x As Buried-Heterostructure Injection Lasers," J. of Applied Physics, vol. 45, No. 11, Nov. 1974, pp. 4899-4906.
Teramoto, "New Structures Boost Semiconductor Laser Performance--At Last A Practical Room-Temp. Visible Laser," JEE Mar. 1975, pp. 32-37.

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