Solid states image sensor array having circuit for suppressing i

Facsimile and static presentation processing – Facsimile – Recording apparatus

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H04N 314

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active

044504845

ABSTRACT:
A solid-state image sensor in which a light signal charge transfer means comprising a metal oxide semiconductor (MOS) vertical shift register and switching elements is provided so that the light signal charge stored in the photoelectric transducer elements in one column in an (m.times.n) photoelectric transducer matrix array is simultaneously transferred to a vertical transmission line; and another charge transfer means comprising a transfer gate means and storage capacitor elements transfers the light signal charge transferred onto the vertical transmission line to a horizontal shift register from which the light signal charge is transferred to an output stage. The horizontal shift register comprises a charge-coupled device (CCD) type horizontal shift register. The solid-state image sensor can eliminate blooming caused by the incidence of light with a high intensity and smear caused by the incidence of light on the areas except predetermined light reception areas.

REFERENCES:
patent: 3715485 (1973-02-01), Weimer
patent: 4189749 (1980-02-01), Hiroshima et al.
patent: 4233632 (1980-11-01), Akiyama

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