Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Patent
1989-12-18
1995-06-20
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
257 14, H01L 2976
Patent
active
054263115
ABSTRACT:
A gate-controlled quantum wire device is disclosed, which may use a channel of electrically resistive material involving tunneling between localized states.
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Fulton et al., "Observation of Single-Electron Charging Effects in Small Tunnel Junctions," Phys. Rev. Let., vol. 59, pp. 109-112, Jul. 6, 1987.
Meirav et al., "One-dimensional electron gas in GaAs: Periodic conductance oscillation as a function of density," Phys. Rev. B, vol. 40, pp. 5871-5874, Sep. 15, 1989.
Scott-Thomas et al., "Conductance Oscillations Periodic in Density of a One Dimensional Electron Gas," Phys. Rev. Let., vol. 62, pp. 583-586, Jan. 30, 1989.
Ellett, Jr. J. David
International Business Machines - Corporation
Larkins William D.
Trepp Robert M.
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