Solid state transmission gate

Details Solid state transmission gate Solid state transmission gate

1982-04-23

1984-09-25

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307585, 307583, H03K 1704, H03K 17687, H03K 1716

Patent

active

044737610

ABSTRACT:
A solid state transmission gate having a low "on" resistance utilizes capacitive devices for partially compensating parasitic capacitance effects, a P-channel device and an N-channel device with a switched tub or substrate to compensate for parasitic capacitance effects. When the transmission gate is conducting, the tub or substrate of the N-channel device is switched from one of its current electrodes to a reference potential such as ground. Before the transmission gate is opened electrically, a settling time is provided to allow charge which is coupled from parasitic capacitance to settle.

REFERENCES:
patent: 3720848 (1973-03-01), Schmidt, Jr.
patent: 3866064 (1975-02-01), Gregory et al.
patent: 4156153 (1979-05-01), Szecheyi
patent: 4319182 (1982-03-01), Hartranft et al.
patent: 4430581 (1984-02-01), Mogi et al.

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