Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Patent
1998-05-14
2000-03-07
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
257347, 257617, 257930, H01L 3100
Patent
active
060344083
ABSTRACT:
A solid state thermal switch providing thermal conductivity in an ON state and enhanced thermal isolation in an OFF state. The thermal switch is manufactured on a substrate by forming an oxide layer under a thin semiconducting layer. The thin semiconducting layer can be made from silicon or a silicon germanium lattice structure. The thin silicon layer is cracked by a neutron bombardment process. A drain and a source are then etched into the thin silicon layer. Cracks in the thin silicon layer disrupt quiescent thermal conductivity in the electron transport layer between the gate and source when the solid state thermal switch is in the OFF state. The thin semiconducting layer transports electrons and heat when the solid state thermal switch is in the ON state. The cracks created in the silicon layer provide thermal isolation from the drain to the source when the thermal switch is in an OFF state and allow heat conduction when the solid state thermal device is in the ON state.
REFERENCES:
patent: 5463233 (1995-10-01), Norling
patent: 5867990 (1999-02-01), Ghoshal
Gerald Mahan et al., "Thermoelectric Materials: New Approaches To An Old problem," American Institute of Physics Today, Pp. 42-47, Mar. 1997.
Boris Moyzhes, "Possible Ways for Efficiency Improvement Of Thermoelectric Materials," IEEE 15th International Conference on Thermoelectrics, Pp. 183-187, 1996.
L.D. Hicks et al., "Experimental Study of the Effect of Quantum-Well Structures on the thermoelectric Figure of Merit," IEEE 15th International Conference on Thermoelectrics, Pp. 450-453, 1996.
Crane Sara
Dillon Andrew J.
International Business Machines - Corporation
Salys Casimer K.
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