Solid state temperature responsive switch

Communications: electrical – Systems – Call station

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Details

73362SC, 357 28, 357 63, 357 64, G01K 722, G08B 2100, H01L 29167, H01L 3110

Patent

active

039626920

ABSTRACT:
A silicon solid state temperature responsive switching device having a thermally dependent P-N junction. The thermally dependent P-N junction is at the interface of a thermally invertible region and a non-invertible region. The thermally invertible region is doped with both P-type and N-type impurities. The P-type impurities have a concentration which is at least about 10 times the concentration of the N-type impurities. The P-type impurities also have an activation energy which is at least about three times the activation energy of the N-type impurities. Below a predetermined temperature, the doping effect of the N-type impurities predominates, and the invertible region is N-type. However, above the predetermined temperature, the doping effect of the P-type impurities predominates. A device insensitive to voltage source polarity is formed by sandwiching the thermally invertible region between two non-invertible regions.

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