Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1988-03-01
1989-12-12
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330 44, 333246, H03F 360
Patent
active
048870498
ABSTRACT:
A fully monolithic solid state device compatible with standard semiconduc processing for amplifying radio frequency (RF) microwave and/or millimeter wave signals is disclosed. The device includes an input microstrip transmission line which capacitively couples an input RF signal to input underlying grating fingers which, in turn, mode-couple the signal to an interaction grating region by way of an input finger taper region. The RF is amplified in the interaction grating region through its interaction with a space charge wave. Then the amplified RF signal is mode-coupled to output underlying grating fingers by way of an output finger taper region before it is capacitively coupled to an output microstrip transmission line.
REFERENCES:
patent: 3913025 (1975-10-01), Zinn
Mottola Steven
The United States of America as represented by the Secretary of
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